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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3353 DESCRIPTION *Collector-Emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) *Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A *High Speed Switching * APPLICATIONS *Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Collector Current-Continuous w ww scs .i VALUE 800 V 500 V 8 V 5 A 10 A 3 A 2 W UNIT .cn mi e Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 Tj Junction Temperature 40 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 0.2A; L= 25mH IC= 3A; IB= 0.6A B 2SC3353 MIN 500 TYP. MAX UNIT V 1.0 1.5 0.1 0.1 15 8 V V mA mA IC= 3A; IB= 0.6A B VCB= 800V; IE= 0 VEB= 5V; IC= 0 IC= 0.1A; VCE= 5V IC= 3A; VCE= 5V Switching Times; Resistive Load ton ts tf Turn-on Time Storage Time Fall Time w w scs .i w IC= 0.5A; VCE= 10V .cn mi e 3 MHz 1.0 3.0 1.0 s s s IC= 3A; IB1= -IB2= 0.6A; VCC= 200V isc Websitewww.iscsemi.cn |
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